Title :
A-BCD: An economic 100 V RESURF silicon-on-insulator BCD technology for consumer and automotive applications
Author :
Van der Pol, Jacob A. ; Ludikhuize, A.W. ; Huizing, H.G.A. ; van Velzen, B. ; Hueting, R.J.E. ; Mom, J.F. ; van Lijnschoten, G. ; Hessels, G.J.J. ; Hooghoudt, E.F. ; van Huizen, R. ; Swanenberg, M.J. ; Egbers, J.H.H.A. ; van den Elshout, F. ; Koning, J.J.
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
Abstract :
A-BCD is a family of 100 V BCD processes on SOI offering latchup free operation, improved robustness, superior EMC performance, higher packing density, lower mask count, high temperature and higher frequency operation and easier design over bulk silicon technology. A wide range of a passive and active (5/12/25/60 and 100 V) devices are available. Device design tradeoffs for n- and p-type LDMOS and extended drain PMOS are discussed in detail. This and the low mask count makes it a versatile process for cost-sensitive consumer and automotive markets
Keywords :
automotive electronics; consumer electronics; power integrated circuits; silicon-on-insulator; 100 V; A-BCD; HVIC; RESURF SOI BCD technology; Si; automotive electronics; consumer electronics; extended drain PMOS device; n-type LDMOS device; p-type LDMOS device; smart power; Automotive engineering; CMOS technology; Dielectric devices; Dielectric substrates; Electromagnetic compatibility; Gold; Jacobian matrices; Power generation economics; Silicon on insulator technology; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856836
