Title :
A 0.35 μm trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switching
Author :
Narazaki, A. ; Maruyama, J. ; Kayumi, T. ; Hamachi, H. ; Moritani, J. ; Hine, S.
Author_Institution :
Ryouden Semicond. Syst. Eng. Corp., Fukuoka, Japan
Abstract :
This paper describes performance of 20 V class N-channel MOSFET using 0.35 μm trench gate structure. It has two characteristics mainly. The first is an ultra low on state resistance by shrinking the trench gate width and increasing cell densities. The other is a high destruction immunity during the inductive switching by optimizing a trench depth. The measured specific on-resistance (Ron,sp) is 25% reduction comparing conventional one. Furthermore, this device can provide high avalanche current density during the inductive switching of JD=30 A/mm2
Keywords :
field effect transistor switches; power MOSFET; power semiconductor switches; 0.35 micron; 20 V; N-channel MOSFET; avalanche current density; destruction immunity; inductive switching; on-state resistance; trench gate structure; Application software; Batteries; Current density; DC-DC power converters; Digital cameras; Electrical resistance measurement; MOSFET circuits; Power MOSFET; Switching circuits; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856847
