Title :
The Influence of Strain on Electronic Structure of InAs/GaAs Quantum Dot with wetting layer
Author :
Liu, Yumin ; Yu, Zhongyuan
Author_Institution :
Sch. of Sci., Beijing Univ. of Posts & Telecommun., Beijing
Abstract :
Using the axis-symmetry finite element numerical simulations, it is demonstrated that the strain distributions and wetting layer have great influences on the electronic structure of the self-organized quantum dot.
Keywords :
III-V semiconductors; finite element analysis; gallium arsenide; indium compounds; semiconductor quantum dots; wetting; axis-symmetry; electronic structure; finite element numerical simulations; self-organized quantum dot; strain distributions; wetting layer; Capacitive sensors; Effective mass; Electrons; Finite element methods; Gallium arsenide; Lattices; Photonic band gap; Quantum computing; Quantum dots; Wave functions;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391217
