Title :
Copper metallization for advanced ULSI devices using spray electroless plating technology
Author_Institution :
FSI Int., Chaska, MN, USA
Abstract :
This paper will describe some of the features and requirements necessary for the spray electroless Cu method such as seed layer, deposition rate and in-situ process controls. Provision for pre-plating and post-plating wafer clean, in-situ chamber cleaning and incorporation of novel electroless seed layers deposition will also be discussed. Finally data showing the feasibility of the spray electroless method, throughput, process performance and cost of ownership will be presented.
Keywords :
ULSI; copper; electroless deposition; integrated circuit metallisation; spray coating techniques; Cu; ULSI device; chamber cleaning; copper metallization; cost of ownership; deposition rate; process control; seed layer; spray electroless plating; throughput; wafer cleaning; Chemical vapor deposition; Conductivity; Copper; Delay effects; Inorganic materials; Integrated circuit interconnections; Metallization; Semiconductor materials; Spraying; Ultra large scale integration;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621043