DocumentCode
2240607
Title
Copper metallization for advanced ULSI devices using spray electroless plating technology
Author
Nguyen, V.T.
Author_Institution
FSI Int., Chaska, MN, USA
fYear
1997
fDate
16-19 March 1997
Firstpage
18
Lastpage
19
Abstract
This paper will describe some of the features and requirements necessary for the spray electroless Cu method such as seed layer, deposition rate and in-situ process controls. Provision for pre-plating and post-plating wafer clean, in-situ chamber cleaning and incorporation of novel electroless seed layers deposition will also be discussed. Finally data showing the feasibility of the spray electroless method, throughput, process performance and cost of ownership will be presented.
Keywords
ULSI; copper; electroless deposition; integrated circuit metallisation; spray coating techniques; Cu; ULSI device; chamber cleaning; copper metallization; cost of ownership; deposition rate; process control; seed layer; spray electroless plating; throughput; wafer cleaning; Chemical vapor deposition; Conductivity; Copper; Delay effects; Inorganic materials; Integrated circuit interconnections; Metallization; Semiconductor materials; Spraying; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621043
Filename
621043
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