• DocumentCode
    2240607
  • Title

    Copper metallization for advanced ULSI devices using spray electroless plating technology

  • Author

    Nguyen, V.T.

  • Author_Institution
    FSI Int., Chaska, MN, USA
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    18
  • Lastpage
    19
  • Abstract
    This paper will describe some of the features and requirements necessary for the spray electroless Cu method such as seed layer, deposition rate and in-situ process controls. Provision for pre-plating and post-plating wafer clean, in-situ chamber cleaning and incorporation of novel electroless seed layers deposition will also be discussed. Finally data showing the feasibility of the spray electroless method, throughput, process performance and cost of ownership will be presented.
  • Keywords
    ULSI; copper; electroless deposition; integrated circuit metallisation; spray coating techniques; Cu; ULSI device; chamber cleaning; copper metallization; cost of ownership; deposition rate; process control; seed layer; spray electroless plating; throughput; wafer cleaning; Chemical vapor deposition; Conductivity; Copper; Delay effects; Inorganic materials; Integrated circuit interconnections; Metallization; Semiconductor materials; Spraying; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621043
  • Filename
    621043