Copper CVD precursors and processes for advanced metallization

Chemical research to identify the "ideal" precursor for copper CVD is still actively being pursued by our group and others. We give here our last results on the performances of new precursors. The major goal of this research is to provide a material which enables the reproducible manufacturing of thin-film copper circuitry with defect-free filling of vias, low electrical resistivity and long-term reliability. Furthermore, the critical understanding of the chemical and physical properties for these CVD precursors may enable precursors with vastly improved properties to be synthesized.