Title :
Improved SOA in low cost power transistor
Author :
Leung, Samuel ; New, Thorndike
Author_Institution :
Motorola Semiconductor Group, Phoenix, Arizona 85018
Abstract :
Recent theories on second breakdown are reviewed. A simple concept on avalanche injection is proposed. The condition of distributed series resistance on stability factor analysis is discussed. An ingenious Motorola patent to realize this condition with low cost precision is illustrated and results on Power Base(R) product design shown. Observations confirm the substantial SOA improvement using above design features on the same emitter geometry and chip size. Conventional hot spot was not noted.
Keywords :
Electric breakdown; Power transistors; Resistance; Semiconductor optical amplifiers; Temperature; Temperature measurement; Transistors;
Conference_Titel :
Power Electronics Specialists Conference, 1978 IEEE
Conference_Location :
Syracuse, New York, USA
DOI :
10.1109/PESC.1978.7072353