DocumentCode :
2241865
Title :
Improved SOA in low cost power transistor
Author :
Leung, Samuel ; New, Thorndike
Author_Institution :
Motorola Semiconductor Group, Phoenix, Arizona 85018
fYear :
1978
fDate :
13-15 June 1978
Firstpage :
195
Lastpage :
201
Abstract :
Recent theories on second breakdown are reviewed. A simple concept on avalanche injection is proposed. The condition of distributed series resistance on stability factor analysis is discussed. An ingenious Motorola patent to realize this condition with low cost precision is illustrated and results on Power Base(R) product design shown. Observations confirm the substantial SOA improvement using above design features on the same emitter geometry and chip size. Conventional hot spot was not noted.
Keywords :
Electric breakdown; Power transistors; Resistance; Semiconductor optical amplifiers; Temperature; Temperature measurement; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1978 IEEE
Conference_Location :
Syracuse, New York, USA
ISSN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.1978.7072353
Filename :
7072353
Link To Document :
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