Title :
Carrier dynamics in Al0.72Ga0.18N multiple quantum wells exhibiting varying internal quantum efficiencies
Author :
Garrett, Gregory A. ; Rotella, Paul ; Shen, Hongen ; Wraback, Michael ; Bhattacharyya, Anirban ; Moustakas, Theodore D. ; Hug, William
Author_Institution :
Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
Abstract :
Time-resolved photoluminescence studies of Mid-UV AlGaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy reveal improved internal quantum efficiencies with increased carrier localization related to chemical ordering.
Keywords :
III-V semiconductors; aluminium compounds; light emitting diodes; molecular beam epitaxial growth; photoluminescence; wide band gap semiconductors; Al0.72Ga0.18N; carrier dynamics; carrier localization; chemical ordering; multiple quantum wells; plasma assisted molecular beam epitaxy; time resolved photoluminescence; varying internal quantum efficiencies; Aluminum gallium nitride; Charge carrier processes; Chemicals; Photoluminescence; Quantum well devices; Radiative recombination;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
