DocumentCode
2242175
Title
Electronic characterization of silicon doped beyond the solubility limit via femtosecond laser irradiation
Author
Winkler, Mark ; Mazur, Eric
Author_Institution
Dept. of Phys., Harvard Univ., Cambridge, MA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We have performed temperature-dependent resistivity measurements of silicon after doping with sulfur via femtosecond laser irradiation. Results are consistent with a theoretically predicted binding energy for sulfur donors of 100 meV below the conduction-band edge.
Keywords
elemental semiconductors; high-speed optical techniques; laser beam effects; laser materials processing; semiconductor doping; silicon; sulphur; binding energy; conduction-band edge; electron volt energy 100 meV; electronic characterization; femtosecond laser irradiation; silicon doping; sulfur donors; temperature-dependent resistivity measurement; Conductivity; Doping; Electromagnetic wave absorption; Laser theory; Optical materials; Semiconductor materials; Silicon; Surface emitting lasers; Ultrafast electronics; Ultrafast optics; (040.6040) Silicon detectors; (160.6000) Semiconductor materials;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571712
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