DocumentCode :
2242408
Title :
Quasi passive optical switch based on transition metal oxide device
Author :
Yen, She-Hwa ; Takashima, Yuruzu ; Tendulkar, Mihir ; Jameson, John R. ; Nishi, Yoshio ; Kazovsky, Leonid G.
Author_Institution :
Stanford Univ., Stanford, CA, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We propose optical switch architecture based on transition metal oxide material. It use electrical field to change oxygen vacancy distribution and its optical property such as absorption coefficient. We demonstrate the absorption coefficient of such device can be latched in binary state, which is useful for optical networking and interconnect applications.
Keywords :
absorption coefficients; optical switches; transition metal compounds; absorption coefficient; binary state; interconnect applications; optical networking; optical property; oxygen vacancy distribution; quasipassive optical switch; transition metal oxide device; Absorption; Color; Materials; Metals; Optical switches; Optical variables control; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950705
Link To Document :
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