DocumentCode :
2242835
Title :
High Areal Density and Broadband Emission from InAs Quantum Dots for Superluminescent Diodes
Author :
Ngo, C.Y. ; Yoon, S.F. ; Fan, W.J. ; Chua, S.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear :
2007
fDate :
26-31 Aug. 2007
Firstpage :
1
Lastpage :
2
Abstract :
High areal density (1.4times1011 cm-1 ) and broad spectral width (136 nm) were obtained from the optimized InAs quantum dot sample. These results will contribute to an improvement in the performance of the current quantum dot superluminescent diodes.
Keywords :
III-V semiconductors; indium compounds; semiconductor quantum dots; superluminescent diodes; InAs; areal density; broad spectral width; broadband emission; current quantum dot superluminescent diodes; superluminescent diodes; Biomedical optical imaging; Gyroscopes; Land surface temperature; Light sources; Optical imaging; Optical modulation; Optical sensors; Quantum dots; Superluminescent diodes; Tomography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
Type :
conf
DOI :
10.1109/CLEOPR.2007.4391338
Filename :
4391338
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2242835
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