Rebound Testing of Intersil Bipolar and BiCMOS Parts

Author

van Vonno, N.W. ; Knudsen, K. ; Hood, R. ; Mansilla, O. ; Bernard, T.M. ; Chesley, P.J.

Author_Institution

High Reliability Products, Intersil Corp., Palm Bay, FL, USA

fYear

2012

fDate

16-20 July 2012

Firstpage

1

Lastpage

7

Abstract

We report the results of high temperature accelerated aging (´rebound´) testing of the Intersil ISL75051SRH low dropout regulator and the Intersil ISL70417SRH quad operational amplifier. These post-irradiation anneals were performed at 100°C under bias for a total of 168 hours, after biased and unbiased high dose rate ⁶⁰Co irradiation. The product types were selected as representative samples of a power management BiCMOS and a complementary bipolar SOI process, respectively. We also include a brief discussion of the parts´ electrical specifications and wafer fabrication process.

Keywords

BiCMOS integrated circuits; ageing; annealing; cobalt; life testing; operational amplifiers; radiation hardening (electronics); semiconductor device testing; silicon-on-insulator; voltage regulators; Co; Intersil ISL70417SRH quad operational amplifier; Intersil ISL75051SRH low dropout regulator; Intersil bipolar rebound testing; complementary bipolar SOI process; high temperature accelerated aging testing; post-irradiation annealling; power management BiCMOS parts; temperature 100 degC; time 168 hour; unbiased high dose rate irradiation; wafer fabrication process; Accelerated aging; Annealing; BiCMOS integrated circuits; Radiation effects; Temperature control; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop (REDW), 2012 IEEE

Conference_Location

Tucson, AZ

ISSN

2154-0519

Print_ISBN

978-1-4673-2730-5

Type

conf

DOI

10.1109/REDW.2012.6353736

Filename

6353736