The behavior of FAB (free air ball) and HAZ (heat affected zone) in fine gold wire

Author

Hong, Sung-Jae ; Cho, Jong-Soo ; Moon, Jeong-Tak ; Lee, Jin

Author_Institution

R&D, MK Electron Co. Ltd., Yong-In, South Korea

fYear

2001

fDate

2001

Firstpage

52

Lastpage

55

Abstract

The trend of high integration and miniaturization of semiconductors has accelerated the development of gold bonding wire with smaller diameter. For the stable bonding of fine wire, it is important to characterize the wire with various diameters during the bonding process. To investigate this relationship, the experiments were done for the various sizes of wire diameter and FAB. The wire size and the FAB size were chosen for the test from 15 μm to 25 μm and from 1.4 WD (wire diameter) to 2.0 WD, respectively. The results showed that as the size of FAB became smaller, the size deviation of FAB increased and FAB itself was tilted to one side. When FAB was formed at the same parameter, the length of HAZ became shorter for the wire with the high temperature of recrystallization. It is also revealed that the length of HAZ decreased for the smaller size of FAB. This phenomenon is considered to be related to the beat generated during the FAB formation

Keywords

elongation; fine-pitch technology; gold; lead bonding; mechanical testing; 15 to 25 micron; Au; FAB; HAZ; bonding wire; diameter; fine wire; free air ball; heat affected zone; length; recrystallization; size deviation; Bonding; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electrons; Gold; Length measurement; Size control; Testing; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Materials and Packaging, 2001. EMAP 2001. Advances in

Conference_Location

Jeju Island

Print_ISBN

0-7803-7157-7

Type

conf

DOI

10.1109/EMAP.2001.983957

Filename

983957