DocumentCode
2245757
Title
Quantum and semiclassical modeling of the threshold voltage dispersion due to random dopants in deep submicron MOSFETs
Author
lannaccone, G. ; Amirante, E.
Author_Institution
Dipt. di Ingegneria dell´´Informazione, Pisa Univ., Italy
fYear
2002
fDate
2002
Firstpage
197
Lastpage
200
Abstract
We have investigated the threshold voltage dispersion in deep submicron mosfets with three dimensional statistical simulations. We show that the doping fluctuations in the vertical directions account almost for the whole dispersion of the threshold voltage. Therefore, we have been able to reproduce the results with a one-dimensional simulator in which also quantum confinement in the channel is taken into account.
Keywords
MOSFET; doping profiles; semiconductor device models; deep submicron MOSFETs; doping fluctuations; quantum confinement; quantum modeling; random dopants; semiclassical modeling; threshold voltage dispersion; vertical directions; Charge carrier density; Doping profiles; Fluctuations; MOSFETs; Poisson equations; Potential well; Semiconductor process modeling; Silicon; Standards development; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN
0-7803-7538-6
Type
conf
DOI
10.1109/NANO.2002.1032224
Filename
1032224
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