DocumentCode :
2247320
Title :
Electromigration behavior of eutectic SnPb solder
Author :
Choi, Jae-Young ; Lee, Sang-Su ; Paik, Jong-Min ; Joo, Young-Chang
Author_Institution :
Dept. of Material Sci. & Eng., Seoul Nat. Univ., South Korea
fYear :
2001
fDate :
2001
Firstpage :
417
Lastpage :
420
Abstract :
Following the trend of miniaturization of VLSI devices, the current density of flip-chip ball bumps has increased significantly and each solder joint is supporting a current density close to 104 A/cm2. Therefore, in SnPb eutectic solder, which has a high diffusivity at the operating temperature due to its low melting point, electromigration became a major reliability threat. We have investigated electromigration behavior of eutectic SnPb solder using thin stripe-type specimens. From the 80°C and 100°C testing, the activation energy for electromigration was calculated as 0.9 eV and the dominant diffusion paths were through interface and surface. From the compositional analysis, it was found that Pb is a dominant migrating species over Sn atoms for 100°C testing
Keywords :
current density; electromigration; flip-chip devices; lead alloys; packaging; reliability; soldering; tin alloys; 0.9 eV; 100 degC; 80 degC; SnPb; VLSI; activation energy; compositional analysis; current density; diffusion paths; diffusivity; dominant migrating species; electromigration behavior; flip-chip ball bumps; melting point; miniaturization; operating temperature; reliability; solder joint; stripe-type specimens; Circuit testing; Current density; Electromigration; Electrons; Flip chip; Geometry; Integrated circuit interconnections; Performance evaluation; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Materials and Packaging, 2001. EMAP 2001. Advances in
Conference_Location :
Jeju Island
Print_ISBN :
0-7803-7157-7
Type :
conf
DOI :
10.1109/EMAP.2001.984020
Filename :
984020
Link To Document :
بازگشت