Highly Linear and Efficient AlGaAs/GaAs HBT Power Amplifier with Integrated Linearizer

Author

Mrunal, A.K. ; Shirasgaonkar, Makarand ; Patrikar, Rajendra

Author_Institution

Microelectron., Indian Inst. of Technol. Bombay, Mumbai

fYear

2006

fDate

4-7 Dec. 2006

Firstpage

1442

Lastpage

1445

Abstract

This paper gives the description of a novel linearization technique using Schottky diode as an active linearizer thereby improving the gain compression and reducing nonlinear phase distortion in AlGaAs/GaAs heterojunction bipolar transistor (HBT). This leads to highly linear and efficient amplification of the QPSK, OFDM. A two stage power amplifier using AlGaAs/GaAs HBT process exhibits an output power (@P1dB) of 25dBm and power added efficiency as high as 43%

Keywords

III-V semiconductors; OFDM modulation; Schottky diodes; aluminium compounds; bipolar integrated circuits; gallium arsenide; power amplifiers; quadrature phase shift keying; AlGaAs-GaAs; HBT power amplifier; OFDM; QPSK; Schottky diode; heterojunction bipolar transistor; integrated linearizer; linearization technique; monolithic microwave integrated circuits; nonlinear phase distortion; power added efficiency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Linearization techniques; OFDM; Phase distortion; Power amplifiers; Power generation; Quadrature phase shift keying; Schottky diodes; Heterojunction Bipolar Transistor; linearizer; monolithic microwave integrated circuits; power amplifier; schottky diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on

Conference_Location

Singapore

Print_ISBN

1-4244-0387-1

Type

conf

DOI

10.1109/APCCAS.2006.342473

Filename

4145673