DocumentCode
2248191
Title
Resolution of 1:1 electron stepper lithography based on patterned cold cathode
Author
Hongo, H. ; Ochiai, Y. ; Kawaura, H.
Author_Institution
Fundamental Res. Labs., NEC Corp., Tsukuba, Japan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
46
Lastpage
47
Abstract
Feasibility of 1:1 electron stepper lithography based on a patterned cold cathode is investigated. The beam spread of electrons emitted from a metal-insulator-semiconductor (MIS) cold cathode was estimated to be approximately 23 nm. Therefore, the electron stepper lithography method should achieve a resolution below 50 nm.
Keywords
MIS devices; cathodes; electron beam lithography; 50 nm; electron beam spread; electron stepper lithography; patterned MIS cold cathode; resolution; Acceleration; Cathodes; Electron beams; Electron emission; Energy resolution; Gold; Lithography; Magnetic fields; Metal-insulator structures; National electric code;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984061
Filename
984061
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