Investigation of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Photoelectrochemical Oxidation Method

A photoelectrochemical (PEC) oxidation method was used to directly grow oxide films on AlGaN surface as gate insulator for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5 V. The gate leakage current is 50 pA and 20 pA at forward gate bias of V_gs=10 V and reverse gate bias of V_gs=-10 V, respectively. Maximum value of g_m is 50 ms/mm of V_gs biased at -2.09 V.