• DocumentCode
    2248445
  • Title

    ZnSe-based microcavity fabricated using epitaxial liftoff

  • Author

    Curran, A. ; Morrod, J.K. ; Prior, K.A. ; Kar, A.K. ; Warburton, R.J.

  • Author_Institution
    Sch. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh
  • fYear
    2007
  • fDate
    26-31 Aug. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present key features of the strong coupling regime in a ZnSe-based microcavity; anticrossing with a normal mode splitting of 23.6 meV at 20 K; narrowing of the lower polariton linewidth near resonance; and composite evolution of the cavity-polaritons. The heavy-hole exciton oscillator strength, fosc= 1.78 times 1013 cm-2 is also deduced.
  • Keywords
    II-VI semiconductors; excitons; microcavities; polaritons; semiconductor epitaxial layers; spectral line narrowing; zinc compounds; ZnSe; cavity-polaritons; electron volt energy 23.6 meV; epitaxial liftoff; heavy-hole exciton oscillator strength; microcavity fabrication; normal mode splitting; polariton linewidth; strong coupling regime; temperature 20 K; Dielectric substrates; Etching; Excitons; Microcavities; Mirrors; Optical coupling; Optical device fabrication; Oscillators; Resonance; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-1173-3
  • Electronic_ISBN
    978-1-4244-1174-0
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2007.4391585
  • Filename
    4391585