• DocumentCode
    22486
  • Title

    Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array

  • Author

    Yoon Kim ; Myounggon Kang ; Se Hwan Park ; Byung-Gook Park

  • Author_Institution
    Memory Div., Samsung Electron. Co. Ltd., Hwasung, South Korea
  • Volume
    34
  • Issue
    8
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    990
  • Lastpage
    992
  • Abstract
    This letter describes 3-D NAND flash memory architecture having four-level stacked single-crystalline silicon nanowire channels. Previously, we designed 3-D NAND flash memory architecture based on single-crystalline channel stacked array (CSTAR). In this letter, CSTAR NAND flash memory is fabricated and its operations are verified. Successful memory operations of each stacked array of CSTAR including program/erase, retention, and endurance performances are demonstrated.
  • Keywords
    NAND circuits; elemental semiconductors; flash memories; integrated circuit manufacture; integrated memory circuits; logic design; silicon; three-dimensional integrated circuits; Si; four-level stacked single-crystalline nanowire channels; single-crystalline channel stacked array; three-dimensional NAND flash memory; 3-D NAND flash memory; memory operation; nanowire SONOS; stacked array;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2262174
  • Filename
    6553062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=22486