Title :
Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array
Author :
Yoon Kim ; Myounggon Kang ; Se Hwan Park ; Byung-Gook Park
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Hwasung, South Korea
Abstract :
This letter describes 3-D NAND flash memory architecture having four-level stacked single-crystalline silicon nanowire channels. Previously, we designed 3-D NAND flash memory architecture based on single-crystalline channel stacked array (CSTAR). In this letter, CSTAR NAND flash memory is fabricated and its operations are verified. Successful memory operations of each stacked array of CSTAR including program/erase, retention, and endurance performances are demonstrated.
Keywords :
NAND circuits; elemental semiconductors; flash memories; integrated circuit manufacture; integrated memory circuits; logic design; silicon; three-dimensional integrated circuits; Si; four-level stacked single-crystalline nanowire channels; single-crystalline channel stacked array; three-dimensional NAND flash memory; 3-D NAND flash memory; memory operation; nanowire SONOS; stacked array;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2262174
