A 2.4-GHz CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

Author

Lee, Ler Chun ; Abu Khari Bin A´ain ; Kordesch, Albert Victor

Author_Institution

Fac. of Electr. Eng., Malaysia Univ. of Technol., Johor

fYear

2006

fDate

4-7 Dec. 2006

Firstpage

1679

Lastpage

1682

Abstract

A 2.4-GHz CMOS fully-integrated tunable image-rejection (IR) low-noise amplifier (LNA) has been designed using Silterra´s standard 0.18-mum CMOS process. The IR notch filter is designed using active inductor without using any passive inductor. With an image frequency of 1.34-GHz, post layout simulation results show the proposed IR LNA exhibits S21 of 27dB, S11 of -23.5dB, 2.2dB noise figure (NF) and input 1-dB compression point of -26dBm at 2.4-GHz. The IR of the IR LNA is -28dB and the tuning range for the IR notch filter is from 1.08 to 1.14-GHz. The first-stage of IR LNA dissipates not more than 10mw, including biasing circuit. The die area occupied by IR LNA is 0.49 mm ², excluding GSG pads

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF filters; inductors; low noise amplifiers; notch filters; 0.18 micron; 1.08 to 1.14 GHz; 1.34 GHz; 2.2 dB; 2.4 GHz; CMOS process; CMOS tunable image-rejection amplifier; IR LNA; IR notch filter; UHF amplifiers; active inductor; biasing circuit; low-noise amplifier; Active inductors; CMOS process; Circuit optimization; Frequency; Image coding; Low-noise amplifiers; Noise figure; Noise measurement; Passive filters; Tunable circuits and devices; LNA; active inductor; image rejection; tunable notch filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on

Conference_Location

Singapore

Print_ISBN

1-4244-0387-1

Type

conf

DOI

10.1109/APCCAS.2006.342107

Filename

4145733