Imprint lithography for mass production

Key issues for nanoimprint lithography (NIL) are reproducibility, pattern transfer accuracy, resolution, control of critical dimension, large area patterning capability and process compatibility. This report addresses these issues and discusses some of the significant developments that have been made in recent years. It encompasses development of imprint equipment, successful fabrication of NIL stamps in SiO/sub 2/ and nickel with sub-20 nm features using optimized EBL and lift-off patterning processes, pattern transfer of sub-100 nm patterns on 6" wafers, and development of anti-adhesion recipes, development of NIL-resists as well as mix & match UV+NIL based fabrication of fully functional large electrode arrays over large areas.