• DocumentCode
    2249286
  • Title

    Easy removal of mold for imprint lithography by ion beam modification of photoresist surface

  • Author

    Baba, A. ; Iwamoto, M. ; Tsubaki, K. ; Asano, T.

  • Author_Institution
    Center for Microelectron. Syst., Kyushu Inst. of Technol., Iizuka, Japan
  • fYear
    2001
  • fDate
    Oct. 31 2001-Nov. 2 2001
  • Firstpage
    96
  • Lastpage
    97
  • Abstract
    We have found that ion beam modification of the novolac photoresist surface is very effective in removing mold in NIL. Using this process, step-and-repeat pattern transfer becomes possible. In addition, this process can increase the imprint depth.
  • Keywords
    ion beam applications; lithography; moulding; nanotechnology; photoresists; Si; Si wafer; imprint depth; ion beam modification; mold removal; nanoimprint lithography; novolac photoresist; photoresist surface; step-and-repeat pattern transfer; Argon; Costs; Fabrication; Ion beams; Lithography; Microelectronics; Resists; Scanning electron microscopy; Temperature; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2001 International
  • Conference_Location
    Shimane, Japan
  • Print_ISBN
    4-89114-017-8
  • Type

    conf

  • DOI
    10.1109/IMNC.2001.984106
  • Filename
    984106
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2249286