• DocumentCode
    2249287
  • Title

    Formation of Al3Ti during physical vapor deposition of titanium on aluminium

  • Author

    Ulmer, L. ; Pitard, F. ; Poncet, D.

  • Author_Institution
    GRESSI LETI/CEA, Grenoble, France
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    137
  • Abstract
    Summary form only given. In the classical approach of W plugs, a Ti / TiN barrier is usually deposited prior to via filling, in order to obtain low contact resistances and satisfactory adherence. Therefore titanium is deposited onto the underlayer aluminium line at the bottom of vias, enabling the formation of Al/sub 3/Ti at the Ti /Al interface. In this study, the kinetics of this chemical reaction have been investigated on full sheet Ti /Al sandwiches processed in a fast anneal chamber. Two characterization methods have been developed. The first one was based on full sheet resistance measurements and the second one on WDXRF spectroscopy. For both methods, a model of the thickness of the Al/sub 3/Ti layer formed versus annealing time and temperature was obtained using a centered composite design of experiments.
  • Keywords
    adhesion; annealing; contact resistance; diffusion barriers; integrated circuit measurement; integrated circuit metallisation; titanium; vapour deposition; Al/sub 3/Ti; Ti-Al; WDXRF spectroscopy; adherence; anneal chamber; annealing time; chemical reaction kinetics; contact resistances; diffusion barrier; full sheet resistance measurements; physical vapor deposition; via filling; Aluminum; Annealing; Chemical processes; Electrical resistance measurement; Filling; Kinetic theory; Plugs; Spectroscopy; Tin; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621091
  • Filename
    621091