DocumentCode :
2249434
Title :
High power III-Nitride UV emitters
Author :
Shatalov, M. ; Yang, J. ; Bilenko, Yu ; Shur, M. ; Gaska, R.
Author_Institution :
Sensor Electron. Technol., Inc., Columbia, SC, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
3
Abstract :
Increasing power and efficiency of UV semiconductor light sources enables great expansion of system applications. We review state-of-the-art III-Nitride LEDs and report on improved device designs and fabrication for achieving high power operation.
Keywords :
III-VI semiconductors; light emitting diodes; light sources; ultraviolet spectra; III-nitride UV emitters; UV semiconductor light sources; high power UV emitters; state-of-the-art III-nitride LED; Aluminum gallium nitride; Current measurement; Fabrication; Junctions; Light emitting diodes; Power generation; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950993
Link To Document :
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