Title :
Achievement of ultra-low threshold excitation power (8 nW) in a nearly-single quantum dot nanocavity laser
Author :
Nomura, Masahiro ; Ota, Yasutomo ; Kumagai, Naoto ; Iwamoto, Satoshi ; Arakawa, Yasuhiko
Author_Institution :
Inst. for Nano Quantum Inf. Electron., Tokyo
Abstract :
We demonstrate photonic crystal nanocavity laser with nearly-single quantum dot gain. Continuous-wave lasing was achieved at photocarrier generation rate of 5 times 109/s, corresponding to several carrier injection into nearly-single quantum dot.
Keywords :
photonic crystals; quantum dot lasers; carrier injection; continuous wave lasing; nearly single quantum dot; photocarrier generation rate; photonic crystal nanocavity laser; power 8 nW; ultra low threshold excitation power; Gallium arsenide; Indium gallium arsenide; Laser excitation; Laser modes; Laser theory; Photonic crystals; Power lasers; Pump lasers; Quantum dot lasers; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
