Title :
Observation of enhanced THz emission from InGaN/GaN multiple quantum wells
Author :
Mu, Xiaodong ; Ding, Yujie J. ; Arif, Ronald A. ; Jamil, Muhammad ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
Broadband THz pulses have been generated from InGaN/GaN multiple quantum wells pumped by a frequency-doubled sub-picosecond laser amplifier at 395 nm. Enhanced THz emissions are strongly correlated with reduced photoluminescence intensities.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical fibre amplifiers; optical harmonic generation; optical pulse generation; optical pumping; wide band gap semiconductors; InGaN-GaN; broadband THz pulses; enhanced THz emission; frequency-doubled sub-picosecond laser amplifier; multiple quantum wells; photoluminescence intensities; wavelength 395 nm; Frequency measurement; Gallium nitride; Laser excitation; Optical pulse generation; Power generation; Pulse amplifiers; Pump lasers; Quantum computing; Quantum well devices; Wavelength measurement; (190.2620) Harmonic generation and mixing; (320.7110) Ultrafast nonlinear optics;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
