DocumentCode :
2250451
Title :
Characterization of thin TiSi2 films by spectroscopic ellipsometry and thermal wave analysis
Author :
Kal, S. ; Kasko, I. ; Ryssel, H.
Author_Institution :
Fraunhofer-Inst. fuer Integrierte Schaltungen, Erlangen, Germany
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
169
Lastpage :
172
Abstract :
In this study, we report quick characterization methods of thin TiSi/sub 2/ films using spectroscopic ellipsometry and Thermal Wave Analysis (TWA). The optical as well as the electrical properties of TiSi/sub 2/ films formed using pre-amorphization implantation and the conventional technique (without pre-amorphization) were compared. The film morphology was analyzed with an atomic force microscope.
Keywords :
amorphisation; ellipsometry; ion implantation; metallic thin films; photothermal effects; titanium compounds; TiSi/sub 2/; TiSi/sub 2/ thin film; atomic force microscopy; electrical properties; morphology; optical properties; pre-amorphization implantation; spectroscopic ellipsometry; thermal wave analysis; Atomic force microscopy; Electrical resistance measurement; Ellipsometry; Inorganic materials; Optical films; Optical materials; Silicides; Spectroscopy; Thermal resistance; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1997.621106
Filename :
621106
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2250451
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