• DocumentCode
    2250451
  • Title

    Characterization of thin TiSi2 films by spectroscopic ellipsometry and thermal wave analysis

  • Author

    Kal, S. ; Kasko, I. ; Ryssel, H.

  • Author_Institution
    Fraunhofer-Inst. fuer Integrierte Schaltungen, Erlangen, Germany
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    In this study, we report quick characterization methods of thin TiSi/sub 2/ films using spectroscopic ellipsometry and Thermal Wave Analysis (TWA). The optical as well as the electrical properties of TiSi/sub 2/ films formed using pre-amorphization implantation and the conventional technique (without pre-amorphization) were compared. The film morphology was analyzed with an atomic force microscope.
  • Keywords
    amorphisation; ellipsometry; ion implantation; metallic thin films; photothermal effects; titanium compounds; TiSi/sub 2/; TiSi/sub 2/ thin film; atomic force microscopy; electrical properties; morphology; optical properties; pre-amorphization implantation; spectroscopic ellipsometry; thermal wave analysis; Atomic force microscopy; Electrical resistance measurement; Ellipsometry; Inorganic materials; Optical films; Optical materials; Silicides; Spectroscopy; Thermal resistance; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621106
  • Filename
    621106