DocumentCode :
2250808
Title :
Estimating the influence of light on the performance of polycrystalline thin-film transistors at the sub-threshold region
Author :
Papadopoulos, N.P. ; Hatzopoulos, A.A. ; Papakostas, D.K. ; Dimitriadis, C.A. ; Siskos, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Aristotle Univ. of Thessaloniki
fYear :
2006
fDate :
16-19 May 2006
Firstpage :
161
Lastpage :
164
Abstract :
The impact of the light illumination on the drain current of polycrystalline silicon thin-film transistors is studied in this work. The increase of the output current as a result of raised light intensity is modeled, based on measured experimental data for different Vds , Vgs values and transistor sizes W/L. The proposed model has been verified against the measurements and the simulated output characteristics give a good approximation in the sub-threshold region
Keywords :
elemental semiconductors; silicon; thin film transistors; drain current; light illumination; polycrystalline thin-film transistors; raised light intensity; silicon thin-film transistors; sub-threshold region; Current measurement; Educational technology; Lighting; Microelectronics; Physics computing; Silicon; Size measurement; Thickness measurement; Thin film transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 2006. MELECON 2006. IEEE Mediterranean
Conference_Location :
Malaga
Print_ISBN :
1-4244-0087-2
Type :
conf
DOI :
10.1109/MELCON.2006.1653061
Filename :
1653061
Link To Document :
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