High-brightness semiconductor lasers fabricated with improved dry-etching technology for ultra-smooth laser facets

Author

Deichsel, E. ; Unger, P.

Author_Institution

Dept. of Optoelectronics, Ulm Univ., Germany

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

218

Lastpage

219

Abstract

An improved dry-etching process has been developed for the fabrication of semiconductor laser diodes with dry-etched resonator mirrors. This technique offers lots of new applications, e.g. the fabrication of unstable-resonator lasers and monolithic optoelectronic integration. However, there are strict requirements for the quality of the dry-etched laser mirrors. The fabrication method of these facets includes two steps, the fabrication of a suitable etch mask and the mirror etching process itself.

Keywords

integrated optoelectronics; laser cavity resonators; masks; optical fabrication; semiconductor lasers; semiconductor technology; sputter etching; LD fabrication; O/sub 2/; RIE; carbon tetrafluoride; dry-etched resonator mirrors; dry-etching technology; etch mask fabrication; high-brightness semiconductor lasers; laser diodes; monolithic optoelectronic integration; reactive ion etching; tetrafluoromethane; ultra-smooth laser facets; unstable-resonator lasers; Etching; Gas lasers; Laser modes; Mirrors; Monitoring; Optical device fabrication; Optical resonators; Power lasers; Resists; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984168

Filename

984168