Characterization of the electronic mobility dependence on frequency and bias in AsGa devices

Author

Chaibi, M. ; Fernández, T. ; Rafael, G. ; Garcia, J.A. ; Mediavilla, A. ; Aghoutane, M.

Author_Institution

Dept. of Commun. Eng., Cantabria Univ., Santander

fYear

2006

fDate

16-19 May 2006

Firstpage

165

Lastpage

168

Abstract

In this paper, a novel technique to study the evolution of the electronic mobility in GaAs microwave MESFET´s devices versus both, frequency and bias condition is presented. The technique employs scattering parameters measurement over the frequency band of interest along with DC and pulsed transconductance and output conductance device measurements. The examination of the presented results shows the need to include the variation of mobility with DC bias and frequency in device nonlinear models

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric admittance; electron mobility; gallium arsenide; microwave devices; AsGa devices; DC bias; DC transconductance; GaAs; GaAs microwave MESFET devices; bias condition; device nonlinear models; electronic mobility dependence characterization; frequency band; output conductance device measurements; pulsed transconductance; scattering parameters measurement; Capacitance; Electron mobility; Frequency measurement; Gallium arsenide; Intrusion detection; MESFETs; Microwave devices; Pulse measurements; Scattering parameters; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 2006. MELECON 2006. IEEE Mediterranean

Conference_Location

Malaga

Print_ISBN

1-4244-0087-2

Type

conf

DOI

10.1109/MELCON.2006.1653062

Filename

1653062