• DocumentCode
    2250852
  • Title

    SiOx Coverage Mesa-typed InGaAs/InP P-I-N Photodetector

  • Author

    Tang, Shiang-Feng ; Liao, Xue-Liang ; Tsai, Hong-Mau ; Hao-Lai, Jian ; Chen, Tzu-Chiang ; Chuang, Hsiu Hsiu ; Yang, San-Te ; Chiang, Cheng-Der

  • Author_Institution
    Mater. & Electro-Opt. Res. Div., Chung-Shan Inst. of Sci. & Technol., Taoyuan
  • fYear
    2007
  • fDate
    26-31 Aug. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The InGaAs/InP P-I-N photodiodes are grown by a metal-organic chemical vapor deposition (MOCVD) with micro-effusion tubes of hydride carrier and reaction gases. Removing top InGaAs and using SiOx coverage on the photon absorbed area leads to enhance responsivity (~3 AAV) and quantum efficiency (>85%). And using Zn diffused to top ring InGaAs results in good ohmic contact region.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; indium compounds; ohmic contacts; p-i-n photodiodes; photodetectors; InGaAs-InP; InGaAs/InP P-I-N photodiodes; SiOx; metal-organic chemical vapor deposition; microeffusion tubes; ohmic contact; Chemical technology; Doping profiles; Indium gallium arsenide; Indium phosphide; MOCVD; Materials science and technology; PIN photodiodes; Photodetectors; Temperature; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-1173-3
  • Electronic_ISBN
    978-1-4244-1174-0
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2007.4391688
  • Filename
    4391688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2250852