Title :
Highly efficient, ultra low dark current germanium photodetectors integrated on submicron silicon waveguides
Author :
Chen, Long ; Dong, Po ; Lipson, Michal
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
Abstract :
We demonstrate germanium photodetectors integrated on submicron silicon waveguides by low-temperature bonding and ion-cut. The devices show very low dark current of ~100 nA, fiber-accessed responsivity of 0.44 A/W, and quantum efficiency of >90%.
Keywords :
bonding processes; elemental semiconductors; germanium; integrated optics; optical waveguides; photodetectors; silicon; Ge; Si; current 100 nA; germanium photodetectors; integrated photodetectors; low dark current photodetectors; submicron silicon waveguides; CMOS process; Dark current; Germanium; Optical devices; Optical waveguides; Photodetectors; Photonic integrated circuits; Plasma temperature; Silicon; Wafer bonding; (040.5160) Photodetectors; (250.5300) Photonic integrated circuits;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
