Title :
Fluoropolymer platforms for 157 nm resist applications
Author :
Ito, H. ; Wallraff, G.M. ; Fender, N. ; Brock, P.J. ; Truong, H.D. ; Larson, C.E. ; Allen, B.D.
Author_Institution :
IBM Res. Div., Almaden Res. Center, San Jose, CA, USA
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
This paper reports progress in the development of 157 nm chemically amplified positive resists, describing the polymer syntheses, polymer characterization (e.g. composition, molecular weight, thermal behavior, dissolution kinetics), and lithographic imaging. Our resists are based on α-trifluoromethylacrylic monomers and hexafluoroisopropanol which has a pKa similar to that of phenol.
Keywords :
dissolving; materials preparation; molecular weight; photoresists; polymer blends; polymers; ultraviolet lithography; /spl alpha/-trifluoromethylacrylic monomers; 157 nm; 157 nm resist; chemically amplified positive resists; composition; dissolution kinetics; fluoropolymer platforms; hexafluoroisopropanol; lithographic imaging; molecular weight; polymer characterization; polymer syntheses; thermal behavior; Absorption; Chemicals; Indium tin oxide; Integrated circuit synthesis; Lithography; Optical polymers; Plastics industry; Printing; Resists; Standards development;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984193
