Title :
High-power broad-band superluminescent diode using selective area growth at 1.5-μm wavelength
Author :
Song, Jung Ho ; Kim, Kisoo ; Leem, Young Ahn ; Kim, Gyungock
Author_Institution :
Convergence & Components Lab. (ICCL), Electron. & Telecommun. Res. Inst., Daejeon
Abstract :
Superluminescent diode with selectively grown multi-quantum-well layer was demonstrated. This light source consists of angled facet single-mode waveguide with a rear absorption region. High output power(77-mW), wide spectral bandwidth(71-nm FWHM), and a very small spectral modulation (0.7-dB) were achieved with a short absorption region length.
Keywords :
light sources; superluminescent diodes; angled facet single-mode waveguide; broad-band superluminescent diode; high-power superluminescent diode; light source; multi-quantum-well layer; power 77 mW; rear absorption region; selective area growth; short absorption region length; wavelength 1.5 μmum; Absorption; Bandwidth; Convergence; Light sources; Optical modulation; Optical sensors; Optical waveguides; Power generation; Superluminescent diodes; Temperature sensors;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391719
