Title :
Carrier depletion based linear silicon modulator
Author :
Lo, Stanley M G ; Li, Chao ; Tsang, Hon Ki
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
Abstract :
We show that the linearity of a silicon electro-optic modulator can be improved by optimizing the embedded diode structure. Optimized designs of silicon modulators can give 5.9 dB improvement in SFDR over conventional LiNbO3 modulators.
Keywords :
Mach-Zehnder interferometers; electro-optical modulation; elemental semiconductors; optical design techniques; p-i-n diodes; silicon; Si; carrier depletion; embedded diode structure; linear silicon modulator; silicon electro-optic modulator; spurious free dynamic range; Fiber optics; Linearity; Optical modulation; Optical variables control; Optical waveguides; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
