Title :
Measurements and modeling of intrinsic fluctuations in MOSFET threshold voltage
Author :
Keshavarzi, Ali ; Schrom, Gerhard ; Tang, Stephen ; Ma, Sean ; Bowman, Keith ; Tyagi, Sunit ; Zhang, Kevin ; Linton, Tom ; Hakim, Nagib ; Duvall, S. ; Brews, John ; De, Vivek
Author_Institution :
Circuit Res. Lab., Intel Corp., Hillsboro, OR, USA
Abstract :
Fluctuations in intrinsic linear VT, free of impact of parasitics, are measured for large arrays of NMOS and PMOS devices on a testchip in a 150nm logic technology. Local intrinsic ρVT, free of extrinsic process, length and width variations, is random, and worsens with reverse body bias. Although the traditional area-dependent component is dominant, a significant component of the fluctuations in small devices depends only on device width or length.
Keywords :
MOSFET; nanotechnology; semiconductor device models; threshold elements; MOSFET threshold voltage; NMOS devices; PMOS devices; intrinsic voltage fluctuations; logic technology; voltage fluctuation modeling; CMOS integrated circuits; Circuit testing; Current measurement; Fluctuations; Logic arrays; Logic devices; Logic testing; MOS devices; MOSFET circuits; Threshold voltage;
Conference_Titel :
Low Power Electronics and Design, 2005. ISLPED '05. Proceedings of the 2005 International Symposium on
Print_ISBN :
1-59593-137-6
DOI :
10.1109/LPE.2005.195480
