Title :
Fabrication process for ultra high aspect ratio polysilazane-derived MEMS
Author :
Cros, T. ; Li-Anne Liew ; Bright, V.M. ; Dunn, M.L. ; Daily, J.W. ; Raj, R.
Author_Institution :
Dept. of Mech. Eng., Univ. of Colorado, Boulder, CO, USA
Abstract :
We present a new process for fabricating polysilazane-derived MEMS components with ultra high aspect ratios. The width-to-height ratio of actual structures fabricated at this time is (/spl sim/20: 1), but shows promising results to achieve aspect ratios of 50: 1. Polysilazane-derived materials are a group of polymers and ceramics that can be functionalized to have a wide range of electronic, magnetic, dielectric, and optical properties. The fabrication process is based on contact lithography of a liquid photopolymer precursor, poly urea methyl vinyl silazane, PUMVS (Kion Corp.), with photoinitiator 2,2-dimethoxy 2-acetophenone, DMPA (Aldrich) for polysilazane. Contact lithography of aqueous photopolymers presents a substantial improvement in resolution, flatness of structures, and aspect ratio compared to microcasting and proximity printing for polysilazane-derived MEMS. In the future, this fabrication technique may be extended beyond polysilazane-derived materials to a wide variety of aqueous photopolymerizable sol-gels, preceramics, and photopolymers.
Keywords :
lithography; micromechanical devices; optical polymers; polymerisation; 2,2-dimethoxy 2-acetophenone photoinitiator; MEMS components; aqueous photopolymers; contact lithography; fabrication process; liquid photopolymer precursor; photopolymerization; poly(urea-methyl-vinyl-silazane); resolution; structure flatness; ultra high aspect ratio polysilazane-derived MEMS; width-to-height ratio; Ceramics; Dielectric materials; Lithography; Magnetic materials; Magnetic properties; Micromechanical devices; Optical device fabrication; Optical materials; Optical polymers; Printing;
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7185-2
DOI :
10.1109/MEMSYS.2002.984232