Title :
Strained germanium membrane using thin film stressor for high efficiency laser
Author :
Nam, Donguk ; Roy, Arunanshu M. ; Huang, Kevin C Y ; Brongersma, Mark L. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
A novel method to introduce more than 0.6% biaxial tensile strain and achieve a 60meV direct band gap reduction in epitaxially grown germanium is demonstrated. Possible applications include high efficiency germanium lasers on silicon substrates.
Keywords :
elemental semiconductors; epitaxial growth; germanium; semiconductor lasers; silicon; substrates; Ge; biaxial tensile strain; direct band gap reduction; epitaxially grown germanium; high efficiency laser; silicon substrates; strained germanium membrane; thin film stressor; Films; Germanium; Photonic band gap; Silicon; Temperature measurement; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
