Title :
Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth
Author :
Choi, Seung-Kyu ; Jang, Jae-Min ; Yi, Sung-Hak ; Kim, Jung-A ; Jung, Woo-Gwang
Author_Institution :
Sch. of Adv. Mater. Eng., Kookmin Univ., Seoul
Abstract :
Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH3 was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applied to optical materials systems.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; self-assembly; semiconductor quantum dots; InGaN-GaN; metal-organic chemical vapor deposition; optical materials systems; periodic interruption growth; self-assembled quantum dots; time 3 s; time 5 s; Atom optics; Chemical vapor deposition; Gallium nitride; Light emitting diodes; MOCVD; Nanoscale devices; Nitrogen; Optical materials; Quantum dots; Temperature;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391809
