DocumentCode :
2253686
Title :
RF power potential of HEMTs
Author :
Berroth, Manfred
Author_Institution :
Inst. for Electr. & Optical Commun. Eng., Stuttgart Univ., Germany
fYear :
1997
fDate :
6-11 Jan 1997
Firstpage :
7
Lastpage :
10
Abstract :
The growing demand for mobile communication is not only driven by hand-held phones. Wireless local area network and personal digital assistants are also requiring high frequency power amplifiers with high power added efficiency. Even higher frequencies of operation are required for base station interlinks and sensor applications like automotive collision avoidance radar. Several watts of output power at millimeter wave frequencies is a very demanding target with the high electron mobility transistor (HEMT) as the most promising candidate. In this paper the present status of millimeter wave transistors and circuits as well as future applications are discussed
Keywords :
millimetre wave amplifiers; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power amplifiers; power field effect transistors; EHF; HEMTs; MM-wave power FETs; RF power potential; high electron mobility transistor; millimeter wave transistors; HEMTs; MODFETs; Millimeter wave circuits; Millimeter wave communication; Millimeter wave radar; Millimeter wave transistors; Mobile communication; Personal digital assistants; Radio frequency; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on
Conference_Location :
Puerto de la Cruz
Print_ISBN :
0-7803-4059-0
Type :
conf
DOI :
10.1109/WOFE.1997.621133
Filename :
621133
Link To Document :
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