Title :
Infrared imaging arrays using advanced III-V materials and technology
Author :
Razeghi, M. ; Kim, J.D. ; Jelen, C. ; Slivken, S. ; Michel, E. ; Mohseini, H. ; Lee, J.J. ; Wojkowski, J. ; Kim, Kwang Soon ; Jeon, H.I. ; Xu, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Abstract :
Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material, growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for the III-V material system
Keywords :
III-V semiconductors; epitaxial growth; image sensors; infrared detectors; infrared imaging; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; 3 to 12 micron; GaAs; GaAs based quantum wells; IR imaging arrays; IR thermal imaging; advanced III-V materials; heteroepitaxially grown Sb-based alloys; material growth; photodetectors; processing technology; strained layer superlattices; thermal imaging; Application software; Gallium arsenide; Hall effect; III-V semiconductor materials; Infrared imaging; Lattices; Optical imaging; Space technology; Substrates; Superlattices;
Conference_Titel :
Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on
Conference_Location :
Puerto de la Cruz
Print_ISBN :
0-7803-4059-0
DOI :
10.1109/WOFE.1997.621147
