DocumentCode :
2254494
Title :
Below bandgap excitation of SnO2 nanowires: The relaxation of trap states
Author :
Chi, S.-H. ; Mazeina, L. ; Prokes, S.M. ; Caldwell, J.D. ; Beadie, G. ; Flom, S.R. ; Shirk, J.S.
Author_Institution :
Opt. Sci. Div., Naval Res. Lab., Washington, DC, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
Carrier relaxation of SnO2 nanowires is investigated by excitation at 3.2 eV, ~0.4 eV below the bandgap. The excited state transmission spectrum from 1.9-2.7 eV is intensity dependent and recovers uniformly with a biexponential relaxation route.
Keywords :
IV-VI semiconductors; carrier relaxation time; electron traps; energy gap; hole traps; nanowires; tin compounds; wide band gap semiconductors; SnO2; below bandgap excitation; biexponential relaxation route; carrier relaxation; electron volt energy 1.9 eV to 2.7 eV; electron volt energy 3.2 eV; excited state transmission spectrum; tin oxide nanowires; trap state relaxation; Absorption; Energy measurement; Kinetic theory; Laboratories; Nanowires; Photonic band gap; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5951206
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2254494
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