DocumentCode :
2254542
Title :
25.54% efficient single-junction GaAs Solar cells using spin-on-film graded-index Tio2/SiO2 AR-coating
Author :
Ho, Wen-Jeng ; Lin, Yi-Jen ; Chien, L.Y. ; Lee, Yi-Yu ; Chen, Yuan-Li ; Yu, Cheng-Ming ; Lai, Quan-Ru ; Syu, Jhih-Kai ; Shiau, H.P.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We report high-efficiency single-junction GaAs Solar cells of 25.54% at one sun using a spin-on graded-index TiO2/SiO2 films. Improved in efficiency, from 19.19% to 25.54%, was obtained when cell without/with proposed graded-index TiO2/SiO2 AR-coating, respectively.
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; optical films; silicon compounds; solar cells; titanium compounds; GaAs; TiO2-SiO2; single-junction solar cells; spin-on graded-index films; spin-on-film graded-index AR-coating; Coatings; Gallium arsenide; Optical films; Optical reflection; Photovoltaic cells; Reflectivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5951209
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2254542
بازگشت