Title :
Nanophotonic gate operation using near-field energy transfer between InAs quantum dots
Author :
Nishibayashi, Kazuhiro ; Yamamoto, Takumi ; Kawazoe, Tadashi ; Akahane, Kouichi ; Yamamoto, Naokatsu ; Ohtsu, Motoichi
Author_Institution :
Dept. of Electron. Eng., Univ. of Tokyo, Tokyo
Abstract :
We demonstrated nanophotonic gate operation of coupled InAs quantum dots using the pump-and-probe micro-photoluminescence measurement. The result indicates that we can select either AND- or NOT-gate operation by controlling the pulse intensity.
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; nanoelectronics; optical control; optical logic; optical materials; photoluminescence; semiconductor quantum dots; AND-gate operation; InAs; NOT-gate operation; coupled quantum dots; nanophotonic gate operation; near-field energy transfer; pulse intensity control; pump-and-probe micro-photoluminescence measurement; Energy exchange; Gallium arsenide; III-V semiconductor materials; Nanoscale devices; Optical devices; Optical pumping; Pump lasers; Quantum dots; Radiative recombination; Size control; (230. 3990) Microstructure devices; (999.9999) Optical Near Field;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
