Title :
Reducing silicon-substrate parasitics of on-chip transformers
Author :
Hongrui Jiang ; Zhihong Li ; Tien, N.C.
Author_Institution :
Berkeley Sensor & Actuator Center, California Univ., Berkeley, CA, USA
Abstract :
Three-terminal transformers have been fabricated on 20-/spl mu/m-deep silicon-oxide blocks formed in the silicon substrate. The thick isolation blocks drastically reduced the parasitics between the devices and the silicon substrate underneath. The quality factors and the self-resonant frequencies were thus increased by more than 100% and 70%, respectively. Such oxide blocks also greatly reduce the cross talk between adjacent devices by as much as 15 dB.
Keywords :
elemental semiconductors; isolation technology; micromechanical devices; semiconductor technology; silicon; silicon compounds; 15 dB; 20 micron; MEMS process module; RF circuits; Si substrate; crosstalk 15dB; quality factors; self-resonant frequencies; thick isolation blocks; three-terminal transformers; wireless communication; Couplings; Eddy currents; Energy loss; Etching; Frequency; Parasitic capacitance; Q factor; Silicon; Spirals; Transformers;
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7185-2
DOI :
10.1109/MEMSYS.2002.984354
