DocumentCode :
2255080
Title :
A high Q, large tuning range, tunable capacitor for RF applications
Author :
Borwick, R.L. ; Stupar, P.A. ; DeNatale, J. ; Anderson, R. ; Chialun Tsai ; Garrett, K.
Author_Institution :
Rockwell Sci. Co., Thousand Oaks, CA, USA
fYear :
2002
fDate :
24-24 Jan. 2002
Firstpage :
669
Lastpage :
672
Abstract :
Using a new, double-sided adhesive process, an analog tunable capacitor has been designed and fabricated with an extremely large tuning range and a high Q. New design components such as two-sided metal deposition, low resistivity silicon, thicker device layers, and double beam suspensions have improved RF performance drastically. In the 200-400 MHz range that this device is intended for, Q values are in excess of 100. In addition, an 8.4 to 1 tuning ratio has been achieved with continuous tuning over a 1.4 to 11.9 pF range. To further improve dynamic performance, devices were operated in a high viscosity gas environment and near critical damping was achieved.
Keywords :
Q-factor; UHF devices; adhesion; capacitors; micromechanical devices; tuning; 1.4 to 11.9 pF; 200 to 400 MHz; MEMS technology; RF applications; analog tunable capacitor; double beam suspensions; double-sided adhesive process; dynamic performance; high Q large tuning range capacitor; high viscosity gas environment; low resistivity silicon; near critical damping; thick device layers; tuning ratio; two-sided metal deposition; Aluminum; Bonding; Capacitors; Etching; Glass; Micromechanical devices; Radio frequency; Silicon devices; Suspensions; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
ISSN :
1084-6999
Print_ISBN :
0-7803-7185-2
Type :
conf
DOI :
10.1109/MEMSYS.2002.984359
Filename :
984359
Link To Document :
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