Large area CVD monolayer graphene for nanoelectronics: Device performance and analysis

Graphene transistors using large area CVD monolayer graphene are constructed and examined. Back-gated devices with exposed graphene channels are characterized to shed light on some of the apparent doping and transport effects that could impact the device performance. Electrical measurements under vacuum and soft-anneal conditions are used to modulate the effective doping density and carrier mobility for both electrons and holes. A good agreement between measurements and a simple drift-diffusion model is obtained when modeling this CVD graphene with a net p-type doping and asymmetric electron/hole mobility. An extracted mean-free path for scattering suggests the presence of large levels of Coulomb and short-range scattering which could be limiting the mobility in this doped material. The results are of importance for understanding the potential of large-area CVD graphene for use in future radiofrequency devices.