Compact model for short and ultra thin symmetric double gate

In this paper we propose a new model based on an analytical model for undoped symmetric double gate MOSFETs introduced by Chenming Hu et al. The proposed model targets to include the quantum confinement and the most important short channel effects. The new model results were compared with a device simulator results to validate the proposed modifications. The proposed model introduces low fitting error reaches to 1% for ultra thin and short channel double gate transistors.