Demonstration of a 140 A, 800 V, fast recover 4H-SiC P-i-N/Schottky barrier (MPS) diode

Author

Alexandrov, P. ; Wright, W. ; Pan, M. ; Weiner, M. ; Jiao, L. ; Zhao, J.H.

Author_Institution

New Brunswick Tech Center, United Silicon Carbide Inc., New Brunswick, NJ, USA

fYear

2001

fDate

2001

Firstpage

13

Lastpage

16

Abstract

DC and transient test results of high power, fast recovery 4H-SiC MPS diodes using multi-step junction termination (MJTE) designs are presented. The MJTE design allows full utilization of the superior breakdown properties of SiC. 4H-SiC MPS diode DC properties were studied and the transient properties were obtained by using an inductively-loaded half-bridge inverter circuit at high current and high temperatures (high-T). Results show that the replacement of Si freewheeling diodes by SiC diodes results in far less storage charge in the diodes and substantial reduction in diode turn-off energy loss, especially at high-T.

Keywords

Schottky diodes; leakage currents; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 140 A; 4H-SiC diodes; 800 V; DC properties; PIN/Schottky diode; SiC; breakdown properties; diode turn-off energy loss reduction; fast recovery diodes; high power diodes; inductively-loaded half-bridge inverter circuit; multi-step junction termination designs; p-i-n/Schottky barrier diodes; transient properties; Circuit testing; Electric breakdown; Energy storage; Inverters; P-i-n diodes; PIN photodiodes; Schottky barriers; Schottky diodes; Silicon carbide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984427

Filename

984427