DC and AC characteristics and modeling of Si SSD-nano devices

Silicon nano scale self switching device (SSD) and side gated transistor (SGT) are nano scale active components. These devices are manufactured with silicon-on-insulator (SOI) technology and are operative at room temperature. Simple transistor level models are developed for them. The model parameters are extracted from test structures. The SSD model was verified with test sample measurements. The model show good DC correspondence with the measured values. AC model gives f_T results that are slightly optimistic but of the right order of magnitude.